View APTM10DAM02G_1167452.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTM10DAM02G
Boost chopper MOSFET Power Module
VBUS CR1
VDSS = 100V RDSon = 2.25m typ @ Tj = 25C ID = 495A @ Tc = 25C
Application * * * AC and DC motor control Switched Mode Power Supplies Power Factor Correction
OUT
Features
Q2
*
G2
S2
0/VBUS
* * * Benefits
S2 G2
VBUS
0/VBUS
OUT
Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* * * * * Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Max ratings 100 495 370 1900 30 2.5 1250 100 50 3000 Unit V A V m W A mJ
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTM10DAM02G- Rev 1
July, 2006
APTM10DAM02G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Min Tj = 25C Tj = 125C
Typ
VGS = 10V, ID = 200A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
2.25 2
Max 400 2000 2.5 4 400
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID = 400A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 400A R G = 1.25 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 400A, R G =1.25 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 400A, R G = 1.25
Min
Typ 40 15.7 5.9 1360 240 720 160 240 500 160 2.2 2.41 2.43 2.56
Max
Unit nF
nC
ns
mJ mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C
Min 200
Typ
Max 750 1000
Unit V A A V ns nC
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=200V
IF = 400A IF = 800A IF = 400A IF = 400A VR = 133V di/dt =800A/s
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
400 1 1.4 0.9 60 110 800 3360
www.microsemi.com
2-6
APTM10DAM02G- Rev 1
July, 2006
APTM10DAM02G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 Transistor Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.1 0.14 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
3-6
APTM10DAM02G- Rev 1
July, 2006
APTM10DAM02G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 Single Pulse
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 480 ID, Drain Current (A)
V GS=15V, 10V & 9V
2500 ID, Drain Current (A) 2000 1500
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
400 320 240 160 80 0
8V
1000
7V
500 0 0 4 8 12 16 20
6V
T J=25C T J=125C T J=-55C
24
28
0
VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to V GS=10V @ 200A
1 2 3 4 5 6 VGS , Gate to Source Voltage (V)
7
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 500 400 300 200 100 0
1.1
VGS =10V
1 0.9 0.8 0 100 200 300 400 500 ID, Drain Current (A)
VGS=20V
25
50
75
100
125
150
July, 2006 4-6 APTM10DAM02G- Rev 1
TC, Case Temperature (C)
www.microsemi.com
APTM10DAM02G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000
Ciss
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 200A
10000
limited by RDSon
1000
100s
100 Single pulse TJ=150C TC=25C 1
1ms 10ms
10
1 10 100 VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 400 800 1200 1600 2000 Gate Charge (nC)
July, 2006
VDS=50V V DS =80V ID=400A TJ=25C V DS =20V
C, Capacitance (pF)
Coss
10000
Crss
1000 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
www.microsemi.com
5-6
APTM10DAM02G- Rev 1
APTM10DAM02G
Delay Times vs Current 600 500 t d(on) and td(off) (ns) t r and tf (ns) 400 300 200 100 0 50 150 250 350 450 550 I D, Drain Current (A) 650
VDS=66V RG=1.25 T J=125C L=100H
Rise and Fall times vs Current 300 250 tr
t d(off)
200 150 100 50 0 50 150 250 350 450 550 ID, Drain Current (A) 650 tf
VDS=66V RG=1.25 T J=125C L=100H
td(on)
Switching Energy vs Current 5 Switching Energy (mJ) 4 3 2 1
Eoff VDS=66V RG=1.25 TJ=125C L=100H E off
Switching Energy vs Gate Resistance 9 8 7 6 5 4 3 2 1 0 2.5 5 7.5 10 12.5 15 Eon
V DS =66V ID=400A T J=125C L=100H
Eon and Eoff (mJ)
Eoff
Eon
0 50 150 250 350 450 550 650 I D, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 60 50 Frequency (kHz)
ZCS
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
TJ=150C
40 30 20 10 0 100
VDS=66V D=50% RG=1.25 T J=125C T C=75C
ZVS
100
TJ=25C
Hard switching
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
July, 2006
200
300
400
500
ID, Drain Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6-6
APTM10DAM02G- Rev 1

▲Up To Search▲

Price & Availability of APTM10DAM02G

	To Download APTM10DAM02G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .